Bending radius (mm): R25.
Appearance: Unshielded, M30.
Sensing distance: 15 mm.
Output configuration: DC 3-wire, PNP.
Model: Operation mode, NC.
General-purpose Threaded.
Capacitive Sensor.
Product lineup with M12, M18, and M30 models.
Fixed sensing distance requires no sensitivity adjustment. Power supply voltage: DC E32-D32L.
Sensing method: Diffuse-reflective.
Sensing distance: 2.5 m.
Output configu ration: NPN
E32-D32L
Long-distance Photoelectric Sensor.
That Supports AC/DC Power Supplies.
Long sensing distance that is approximately 8,
times that of our conventional model (for the,
Through-beam and Diffuse-reflective models).
(Through-beam: 40 m, Retro-reflective: 7 m, and,
Diffuse-reflective: 2.5 m.) .
Improved visibility:
A red LED that makes the spot visible E32-D32L.
Large indicators that can be seen even from a,
distance.
Improved operability.
(Enlarged sensitivity adjuster and operation selector)
Freely selectable power supply input (24 to 240 VDC, 24 to 240 VAC).
(Additional types added to the DC type lineup.)
Models with infrared LEDs are also available. Appearance: M18.
Sensing distance: 10 mm E32-D32L.
Connection method: M12 Connector Models .
Cable specifications: --.
Operation mode : NC .
Pin arrangement: (1, 2): (AC, AC).
Applicable connector code: F.
Your Search for Proximity Sensors.
Starts with the World-leading.
Performance and Quality of the E2E.
Standard Sensors for detecting ferrous metals.
Wide array of variations. Ideal for a variety of applications.
Models with different frequencies are also available to prevent,
mutual interference.
Superior environment resistance with standard cable made of oil,
resistant PVC and sensing surface made of material that resists,
cutting oil.
Useful to hhelp prevent disconnection E32-D32L.
Cable protector provided as a standard feature. Power: DC.
Purpose: small.
Amplifier unitE3F3-D81M detection method: diffuse reflection type,
Wire lead out type,
Type: metal appearance; PNP output,
Threaded cylindrical phhotoelectric sensor, built-in amplifier,
Photoelectric sensor with proximity sensor appearance
High anti interference with optoelectronic -IC technology