Sensing range: 400 to 6,000 mm.
Now, more advanced with a new mutual.
interference prevention function.
Long-distance detection of up to 6,000 mm supports a wide vari,
ety of applications.
The Sensor is not affected by the color or material of objects.
A setting plug with temperature compensation makes it easy to,
set the sensing range E2V-X8B1-M1.
Mutual interference prevention.
Optical system: Diffuse reflective E2V-X8B1-M1
Beam shape: Spot beam.
Sensing distance: 100±35mm.
Resolution: 5µm.
Stable, Easy & Affordable.
New Regular-reflective Sensor Head.
Designed for Optimal Wafer Measurement. Model: Shielded, M8.
Sensing distance: 1.5 mm.
Output configuration: DC 3-wire, NPN.
Model: Operation mode, NO E2V-X8B1-M1.
Proximity Sensor with Resin Case,
with Superb Water Resistance.
IP68 protection.
Mutual interference prevention with models with different,
frequencies is also available. Optical system: diffuse type.
Detection distance: 100 positive and negative 20mm.
Beam shape: linear beam.
Beam diameter: 3.5mm * 60 M.
Resolution: 1 m.
Cable length: 2m. Appearance: Shielded, M18.
Sensing distance: 7 mm E2V-X8B1-M1.
Model: Operation mode, NO.
Proximity Sensor with a Long Screw Length.
Increased tightening strength. Cable protectors,
provided as a standard feature.
Increased indicator visibility.
A milled section for wrench grip on all models.Appearance: Shielded, M30.
Sensing distance: 15 mm.
Output: NPN.
Model: Operation mode NO.
Aluminum and Iron Both.
Detectable from Long Distances. Sensing method: Retro-reflective Sensors.
Appearance: Horizontal.
Connection method: Connector(M12).
Sensing disttance: 7 m E2V-X8B1-M1.
Functions: --.
Model: PNP output.
Ordering Information.
Built-in Amplifier Photoelectric Sensors. E3F3-R82 detection methods: Regression reflection type,
Wire lead out type,
Type: Plastic appearance; PNP output,
Threaded cylindrical phhotoelectric sensor, built-in amplifier,
Photoelectric sensor with proximity sensor appearance
High anti interference with optoelectronic -IC technology